Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
Alexander S. MayorovSchool of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United KingdomRoman V. GorbachevSchool of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United KingdomSergey V. MorozovInstitute for Microelectronics Technology, 142432 Chernogolovka, RussiaLiam BritnellSchool of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United KingdomRashid JalilManchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, United KingdomLeonid A. PonomarenkoSchool of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United KingdomPeter BlakeManchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, United KingdomKostya S. NovoselovSchool of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United KingdomKenji WatanabeNational Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 JapanTakashi TaniguchiNational Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 JapanA. K. GeimManchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, United Kingdom
2011en
ABI
Annotatsiya
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
Hali tarjima qilinmagan
Identifikatorlar
Iqtiboslar va manbalar
3 ta iqtibos0 ta foydalanilgan manba