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Graphene ballistic nano-rectifier with very high responsivity

Gregory AutonManchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester, M13 9PL, UKJiawei ZhangSchool of Electrical and Electronic Engineering, University of Manchester, Manchester, M13 9PL, UKRoshan Krishna KumarSchool of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UKHanbin WangSchool of Physics and Center of Nanoelectronics, Shandong University, Jinan, 250100, ChinaXijian ZhangSchool of Physics and Center of Nanoelectronics, Shandong University, Jinan, 250100, ChinaQingpu WangSchool of Physics and Center of Nanoelectronics, Shandong University, Jinan, 250100, ChinaE.W. HillManchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester, M13 9PL, UKAimin SongSchool of Electrical and Electronic Engineering, University of Manchester, Manchester, M13 9PL, UK

2016en

ABI

Annotatsiya

Abstract Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ∼200,000 cm 2 V −1 s −1 is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW −1 with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz −1/2 . Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization.

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Identifikatorlar

DOI: 10.1038/ncomms11670

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