Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO
А. S. KomolovSt. Petersburg State University, St. Petersburg, RussiaЭ. Ф. ЛазневаSt. Petersburg State University, St. Petersburg, RussiaВ. С. СоболевSt. Petersburg State University, St. Petersburg, RussiaS. A. PshenichnyukInstitute of Molecule and Crystal Physics, Ufa Federal Research Centre, Russian Academy of Sciences, Ufa, RussiaN. L. AsfandiarovInstitute of Molecule and Crystal Physics, Ufa Federal Research Centre, Russian Academy of Sciences, Ufa, RussiaEvgeniy V. ZhizhinSt. Petersburg State University, St. Petersburg, RussiaД. А. ПудиковSt. Petersburg State University, St. Petersburg, RussiaЕ. А. ДубовSt. Petersburg State University, St. Petersburg, RussiaИ. А. ПронинPenza State University, Penza, RussiaFeruza AkbarovaPhysical–Technical Institute, Uzbekistan Academy of Sciences, Tashkent, UzbekistanUtkirjon SharopovBukhara State University, Bukhara, Uzbekistan
ABI
Annotatsiya
The surface topography and density of unoccupied electronic states at thermal deposition of ultrathin dibromo-bianthracene films on the ZnO surface have been studied. The electronic characteristics of unoccupied electronic states during growth of dibromo-bianthracene films to a thickness of 10 nm have been investigated by total current spectroscopy using a probe electron beam. The experimental dependences have been analyzed using theoretical calculation of the orbital energies for dibromo-bianthracene molecules by the method of density functional theory (DFT).
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