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Localized Electron Density Engineering for Stabilized B-γ CsSnI<sub>3</sub>-Based Perovskite Solar Cells with Efficiencies &gt;10%

Tao YeDepartment of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United StatesXizu WangAgency for Science, Technology and Research, Institute of Materials Research and Engineering (IMRE), #08-03, 2 Fusionopolis Way, Innovis 138634, SingaporeKai WangDepartment of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United StatesShaoyang MaKey Laboratory of All Optical Network and Advanced Telecommunication Network of Ministry of Education, Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, ChinaDong YangDepartment of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United StatesYu HouDepartment of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United StatesJungjin YoonDepartment of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United StatesKe WangDepartment of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United StatesShashank PriyaDepartment of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
2021en
ABI

Annotatsiya

Black orthorhombic (B-γ) CsSnI3 with low toxicity and excellent optoelectronic properties is a promising candidate for perovskite solar cell (PSC). However, the performance of the B-γ CsSnI3-based PSCs is much lower than their lead-based or organotin-based counterparts due to the heavy self-doping of Sn2+ to form Sn4+ under ambient-air conditions. Here, this undesirable oxidation in CsSnI3 is restricted by engineering the localized electron density with phthalimide (PTM) additive. The lone electron pairs of NH and two CO units of PTM are designed to form trigeminal coordination bonding with Sn2+, resulting in reduced defect density and relatively grain-ordered perovskite film. The champion efficiencies of 10.1% and 9.6% are obtained for the modified rigid and flexible B-γ CsSnI3-based PSCs, respectively. These encapsulated devices maintain 94.3%, 83.4%, and 81.3% of their initial efficiencies under inert (60 days), ambient (45 days), and 1 Sun continuous illumination at ∼70 °C (2000 min) conditions, respectively.

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DOI
10.1021/acsenergylett.1c00342

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