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Defect Scattering in Graphene

Jianhao ChenDepartment of Physics, University of Maryland, College Park, MD 20742 USAWilliam CullenCenter for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742 USAChaun JangCenter for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742 USAMichael S. FuhrerCenter for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742 USAEllen D. WilliamsCenter for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742 USA

2009en

ABI

Annotatsiya

Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as is evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is 4 times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e(2)/pih, the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in midgap states.

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Identifikatorlar

DOI: 10.1103/physrevlett.102.236805

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