Excited-state nonlinearity in polythiophene thin films investigated by the Z-scan technique
Lina YangInstitute for Ultrafast Spectroscopy and Lasers, Center for Analysis of Structures and Interfaces, Departments of Electrical Engineering and Physics, The City College and the Graduate School of the City University of New York, New York, New York 10031R. ZamboniC. TalianiR. DorsinvilleInstitute for Ultrafast Spectroscopy and Lasers, Center for Analysis of Structures and Interfaces, Departments of Electrical Engineering and Physics, The City College and the Graduate School of the City University of New York, New York, New York 10031Q. Z. WangInstitute for Ultrafast Spectroscopy and Lasers, Center for Analysis of Structures and Interfaces, Departments of Electrical Engineering and Physics, The City College and the Graduate School of the City University of New York, New York, New York 10031P. X. YeInstitute for Ultrafast Spectroscopy and Lasers, Center for Analysis of Structures and Interfaces, Departments of Electrical Engineering and Physics, The City College and the Graduate School of the City University of New York, New York, New York 10031R. R. AlfanoInstitute for Ultrafast Spectroscopy and Lasers, Center for Analysis of Structures and Interfaces, Departments of Electrical Engineering and Physics, The City College and the Graduate School of the City University of New York, New York, New York 10031
1992en
ABI
Annotatsiya
Measurements of the third-order optical nonlinear susceptibility χ(3) have shown that nonlinearity around the single-photon absorption region is dominated by the saturation absorption in polythiophene thin films. The sign and the size of the real and the imaginary part of χ(3) have been measured at 532 nm to be −6.1 × 10−9 and −1.9 × 10−9 esu, respectively, by the Z-scan method.
Hali tarjima qilinmagan
Identifikatorlar
Iqtiboslar va manbalar
15 ta iqtibos0 ta foydalanilgan manba