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Absorption and intensity-dependent photoluminescence measurements on CdSe quantum dots: assignment of the first electronic transitions

A. I. EkimovLaboratoire d’Optique Quantique du Centre National de la Recherche Scientifique, Ecole Polytechnique, 91128 Palaiseau Cedex, FranceI. A. KudryavtsevIoffe Physicotechnical Institute, St. Petersburg 194021, RussiaAl. L. ÉfrosFakultät für Physik, Technische Universität München, Physik Department, James-Franck-Strasse, 8096 Garching/München, GermanyT. V. YazevaIoffe Physicotechnical Institute, St. Petersburg 194021, RussiaF. HacheLaboratoire d’Optique Quantique du Centre National de la Recherche Scientifique, Ecole Polytechnique, 91128 Palaiseau Cedex, FranceMarie‐Claire Schanne‐KleinLaboratoire d’Optique Quantique du Centre National de la Recherche Scientifique, Ecole Polytechnique, 91128 Palaiseau Cedex, FranceA. V. RodinaIoffe Physicotechnical Institute, St. Petersburg 194021, RussiaD. RicardLaboratoire d’Optique Quantique du Centre National de la Recherche Scientifique, Ecole Polytechnique, 91128 Palaiseau Cedex, FranceC. FlytzanisLaboratoire d’Optique Quantique du Centre National de la Recherche Scientifique, Ecole Polytechnique, 91128 Palaiseau Cedex, France
1993en
ABI

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CdSe is used as a prototype to show the implications of valence-band degeneracy for the optical properties of strongly quantum-confined nanocrystals. Absorption spectra and photoluminescence spectra obtained under intermediate and strong pulsed excitation show the presence of new structures. The energy levels for the electron and the hole are calculated with the spherical confinement, the nonparabolicity of the conduction band, and the valence band degeneracy taken into account. The oscillator strengths of the dipole-allowed transitions are also calculated. This model is found to be in good agreement with the experimental observations, which originate mainly from the quantization of the energy spectrum of holes with due account given to valence-band degeneracy.

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