Temperature-dependent shifts of three emission bands for ZnO nanoneedle arrays
Bingqiang CaoChinese Academy of Sciences Key Lab of Materials Physics, and Anhui Key Laboratory of Nanomaterials and Nanostrctures, Institute of Solid State Physics, , Hefei 230031, Anhui, People’s Republic of ChinaWeiping CaiChinese Academy of Sciences Key Lab of Materials Physics, and Anhui Key Laboratory of Nanomaterials and Nanostrctures, Institute of Solid State Physics, , Hefei 230031, Anhui, People’s Republic of ChinaHaibo ZengChinese Academy of Sciences Key Lab of Materials Physics, and Anhui Key Laboratory of Nanomaterials and Nanostrctures, Institute of Solid State Physics, , Hefei 230031, Anhui, People’s Republic of China
2006en
ABI
Annotatsiya
The photoluminescence properties of ZnO nanoneedle arrays, grown on silicon substrate by electrodeposition, are studied over the temperatures from 10K to 300K. There exist three emission bands in ultraviolet, violet, and green regions, respectively. With increasing temperature, these bands show different temperature dependences: A normal redshift for the ultraviolet emission, S-shaped shift for the violet emission, and blueshift for the green one. The origins of these three bands and their temperature-dependent shifts are explained based on defect levels (zinc interstitial and oxygen vacancy levels) and carrier localization effect at the defect levels in addition to band-gap shrinkage.
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