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Electronic Transport Properties of Individual Chemically Reduced Graphene Oxide Sheets

Cristina Gómez‐NavarroMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany, Department of Chemistry, University of Siegen, D-57068 Siegen, Germany, and Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandR. Thomas WeitzMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany, Department of Chemistry, University of Siegen, D-57068 Siegen, Germany, and Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandAlexander M. BittnerMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany, Department of Chemistry, University of Siegen, D-57068 Siegen, Germany, and Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandMatteo ScolariMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany, Department of Chemistry, University of Siegen, D-57068 Siegen, Germany, and Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandAlf MewsMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany, Department of Chemistry, University of Siegen, D-57068 Siegen, Germany, and Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandMarko BurghardMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany, Department of Chemistry, University of Siegen, D-57068 Siegen, Germany, and Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandKlaus KernMax-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany, Department of Chemistry, University of Siegen, D-57068 Siegen, Germany, and Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

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Annotatsiya

Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2-200 cm2/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest that charge transport occurs via variable range hopping between intact graphene islands with sizes on the order of several nanometers. Furthermore, the comparative study of multilayered sheets revealed that the conductivity of the undermost layer is reduced by a factor of more than 2 as a consequence of the interaction with the Si/SiO2 substrate.

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DOI: 10.1021/nl072090c

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