Design and Synthesis of a New Layered Thermoelectric Material LaPbBiS<sub>3</sub>O
Yun‐Lei SunDepartment
of Physics, Zhejiang University, Hangzhou 310027, ChinaAbduweli AblimitDepartment
of Physics, Zhejiang University, Hangzhou 310027, ChinaHui‐Fei ZhaiDepartment
of Physics, Zhejiang University, Hangzhou 310027, ChinaJin‐Ke BaoDepartment
of Physics, Zhejiang University, Hangzhou 310027, ChinaZhang‐Tu TangDepartment
of Physics, Zhejiang University, Hangzhou 310027, ChinaXinbo WangBeijing
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaNanlin WangCollaborative Innovation
Center of Quantum Matter, Beijing, ChinaChunmu FengDepartment
of Physics, Zhejiang University, Hangzhou 310027, ChinaGuang‐Han CaoDepartment
of Physics, Zhejiang University, Hangzhou 310027, China
2014en
ABI
Annotatsiya
A new quinary oxysulfide LaPbBiS3O was designed and successfully synthesized via a solid-state reaction in a sealed evacuated quartz tube. This material, composed of stacked NaCl-like [M4S6] (where M = Pb, Bi) layers and fluorite-type [La2O2] layers, crystallizes in the tetragonal space group P4/nmm with a = 4.0982(1) Å, c = 19.7754(6) Å, and Z = 2. Electrical resistivity and Hall effect measurements demonstrate that it is a narrow gap semiconductor with an activation energy of ∼17 meV. The thermopower and the figure of merit at room temperature were measured to be -52 μV/K and 0.23, respectively, which makes LaPbBiS3O and its derivatives be promising for thermoelectric applications.
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