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Active-Tuning and Polarization-Independent Absorber and Sensor in the Infrared Region Based on the Phase Change Material of Ge2Sb2Te5 (GST)

Zhongyi GuoSchool of Computer and Information, Hefei University of Technology, Hefei, 230009, China. [email protected]Xiao YangSchool of Computer and Information, Hefei University of Technology, Hefei, 230009, ChinaFei ShenSchool of Computer and Information, Hefei University of Technology, Hefei, 230009, ChinaQingfeng ZhouSchool of Computer and Information, Hefei University of Technology, Hefei, 230009, ChinaJun GaoSchool of Computer and Information, Hefei University of Technology, Hefei, 230009, ChinaKai GuoSchool of Computer and Information, Hefei University of Technology, Hefei, 230009, China. [email protected]

2018en

ABI

Annotatsiya

Abstract Phase-change materials (PCMs), possessing thermo-optic and thermo-electric properties, have constantly enabled the rewritable optical data storage and the commercialized phase-change memory devices. In particular, Ge 2 Sb 2 Te 5 (GST) has been considered for configurable photonics applications, such as active dielectric metasurface. In this paper, we report an active absorber with metal-insulator-metal (MIM) scheme with GST in the infrared region. The absorber consists of Al disk and reflective Al film with a GST spacer layer. Extraordinary absorption with peaks of more than 90% can be achieved over a broad bandwidth, attributing to highly confined gap surface plasmon resonance. In addition, the absorption can be tuned via adjusting the proportion of GST crystallization, which is a unique advantage to design active device. Meanwhile, the absorption is polarization-independent owing to its structural symmetry. Furthermore, we introduce the designed absorber to the application of sensing. This nearly perfect absorbing strategy offers great potential in sensing applications due to its flexibility and polarization-independence.

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DOI: 10.1038/s41598-018-30550-2

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