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Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

Jeff B. CasadyNASA Center for Commercial Development, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201, U.S.AWayne JohnsonNASA Center for Commercial Development, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201, U.S.A

1996en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/0038-1101(96)00045-7

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