Silicon-based photocells of enhanced spectral sensitivity with nano-sized graded band gap structures
М. К. БахадырхановTashkent State Technical University, Tashkent, UzbekistanС. Б. ИсамовTashkent State Technical University, Tashkent, UzbekistanХ. М. ИлиевTashkent State Technical University, Tashkent, UzbekistanС. А. ТачилинTashkent State Technical University, Tashkent, UzbekistanKhayratdin U. KamalovTashkent State Technical University, Tashkent, Uzbekistan
ABI
Annotatsiya
Photoelectric properties of monocrystalline silicon with multiply charged nanoclusters are studied that generate “silicon clusters,” i.e., nano-sized graded band gap structures. Multiply charged nanoclusters of manganese atoms strongly influence the photoelectric properties of monocrystalline silicon and expand the range of spectral sensitivity up to 8 μm; the photoelectric sensitivity reaches ∼109. Conditions occur for the emergence of photo-emf in such a material in the infrared region when hν< E g . The obtained experimental data expand the functional capabilities for the application of silicon with multiply charged impurity atoms.
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