Cascade Solar Cells Based on GaP/Si/Ge Nanoheterostructures
Л. С. ЛунинSouthern Scientific Center, Russian Academy of Sciences, 344006, Rostov-on-Don, RussiaМ. Л. ЛунинаSouthern Scientific Center, Russian Academy of Sciences, 344006, Rostov-on-Don, RussiaА. С. ПащенкоSouthern Scientific Center, Russian Academy of Sciences, 344006, Rostov-on-Don, RussiaД. Л. АлфимоваSouthern Scientific CenterD. A. ArustamyanSouthern Scientific Center, Russian Academy of Sciences, 344006, Rostov-on-Don, RussiaA. E. KazakovaSouthern Scientific Center, Russian Academy of Sciences, 344006, Rostov-on-Don, Russia
2019en
ABI
Annotatsiya
GaP/Si/Ge nanoheterostructures have been obtained using the method of pulsed laser deposition, and an energy band diagram of cascade solar cells based on these heterostructures were modeled. GaP and Ge nanolayers grown on Si substrates were studied by Raman spectroscopy and X-ray diffraction. Spectral dependences of the external quantum efficiency response of GaP/Si/Ge nanoheterostructures were determined.
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