Bipolaron anisotropic flat bands, Hall mobility edge, and metal-semiconductor duality of overdoped high-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>T</mml:mi></mml:mrow><mml:mrow><mml:mi>c</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>oxides

Hole bipolaron band structure with two flat anisotropic bands is derived for oxide superconductors. Strong anisotropy leads to one-dimensional localization in a random field which explains the metal-like value of the Hall effect and the semiconductorlike doping dependence of resistivity of overdoped oxides. Doping dependence of ${T}_{c}$ and ${\ensuremath{\lambda}}_{H}(0)$ as well as the low-temperature dependence of resistivity, of the Hall effect, ${H}_{c2}(T)$ and robust features of angle-resolved photoemission spectroscopy of several high-${T}_{c}$ copper oxides are explained.

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