ZnO: growth, doping & processing
D. P. NortonDepartment of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USAYoung-Woo HeoDepartment of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USAM. IvillDepartment of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USAK. IpDepartment of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USAS. J. PeartonDepartment of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USAM. F. ChisholmOak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831, USAT. SteinerAir Force Office of Scientific Research, Arlington, VA 22217, USA
2004en
ABI
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A review is given here of recent results in developing improved control of growth, doping, and fabrication processes for ZnO devices with possible applications to ultraviolet (UV) light emitters, spin functional devices, gas sensors, transparent electronics, and surface acoustic wave devices. ZnO can be grown on cheap substrates such as glass at relatively low temperatures and may have advantages over the GaN system in some of these applications.
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