Probing the Nature of Defects in Graphene by Raman Spectroscopy
Axel EckmannSchool of Chemistry and Photon
Science Institute, University of Manchester, United KingdomAlexandre FeltenKarlsruhe Institute of Technology, Karlsruhe, GermanyArtem MishchenkoSchool of Physics and Astronomy, University of Manchester, United KingdomL. BritnellSchool of Physics and Astronomy, University of Manchester, United KingdomRalph KrupkeKarlsruhe Institute of Technology, Karlsruhe, GermanyKostya S. NovoselovSchool of Physics and Astronomy, University of Manchester, United KingdomCinzia CasiraghiPhysics
Department, Freie Universität, Berlin,
Germany
2012en
ABI
Annotatsiya
Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (∼13) for sp(3)-defects, it decreases for vacancy-like defects (∼7), and it reaches a minimum for boundaries in graphite (∼3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.
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