Formation of Color Centers and Concentration of Defects in Boron Carbide Irradiated at Low Gamma Radiation Doses
M.N. MirzayevInstitute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, AZ1143, AzerbaijanR. N. MehdiyevaInstitute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, AZ1143, AzerbaijanС. З. МеликоваInstitute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, AZ1143, AzerbaijanS. H. JabarovAzerbaijan State Pedagogical University, Baku, AZ, 1000, AzerbaijanT.T. ThabetheDepartment of Physics, University of Pretoria, Pretoria, 0002, South AfricaSaphina BiiraDepartment of Physics, Busitema University, Tororo, UgandaMirze Abdulla KurbanovInstitute of Physics, Azerbaijan National Academy of Sciences, Baku, AZ1143, AzerbaijanNguyen Van TiepJoint Institute for Nuclear Research, Dubna, 141980, Russia
2019en
ABI
Annotatsiya
In the present work, boron-carbide (B4C) samples (purity of 99.5% and density of 1.80 g/cm3) were irradiated by using gamma radiation from a 60Co gamma source. Gamma irradiation of the samples was carried out at doses 48.5, 97, 145.5 and 194 kGy. The samples were analysed using a UV-V Gary 50 Scan spectrophotometer. The effect of different irradiation doses on the defects created in the B4C samples was investigated. In the B4C samples, the formation processes for color centers depended on the gamma irradiation dose. The calculated activation energies at room temperature essential for the formation of F and F+ color centers ranged from 1.89 – 2.05 eV.
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