Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition
Bingqiang CaoInstitut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, D-04103Leipzig, GermanyMichael LorenzInstitut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, D-04103Leipzig, GermanyA. RahmInstitut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, D-04103Leipzig, GermanyHolger von WencksternInstitut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, D-04103Leipzig, GermanyC. CzekallaInstitut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, D-04103Leipzig, GermanyJ. LenznerInstitut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, D-04103Leipzig, GermanyG. BenndorfInstitut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, D-04103Leipzig, GermanyMarius GrundmannInstitut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, D-04103Leipzig, Germany
2007en
ABI
Annotatsiya
Phosphorus-doped ZnO (ZnO:P) nanowires were successfully prepared by a novel high-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO:P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A0, X, 3.356 eV), free-to-neutral-acceptor emission (e, A0, 3.314 eV), and donor-to-acceptor pair emission (DAP, ∼3.24 and ∼3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires.
Hali tarjima qilinmagan
Identifikatorlar
Iqtiboslar va manbalar
3 ta iqtibos0 ta foydalanilgan manba