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Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy

Yeon Sik JungKorea Institute of Technology Research Center Thin Film Materials Research Center, , Cheongryang, P.O. Box 131, Seoul 130-650, KoreaW. K. ChoiKorea Institute of Technology Research Center Thin Film Materials Research Center, , Cheongryang, P.O. Box 131, Seoul 130-650, KoreaO. V. KononenkoRussian Academy of Science Institute of Microelectronics Technology and High Purity Materials, , 142432 Chernogolovka, Moscow Region, RussiaГ. Н. ПанинRussian Academy of Science Institute of Microelectronics Technology and High Purity Materials, , 142432 Chernogolovka, Moscow Region, Russia

2006en

ABI

Annotatsiya

Luminescence properties of ZnO films, which have been epitaxially grown on c-sapphire (0001) substrates by plasma-assisted molecular beam epitaxy, are investigated by means of different excitation sources and their measurement conditions. With the increase of measurement temperature, photoluminescence spectra clearly present, the appearance of different bound-exciton peaks (I10 line) with an abrupt increase of emission intensity at the measurement temperature of 30-50K. Hypothetical explanations on the basis of thermalization effects, vibronic/rotational resonance states, and the involvement of the B-valence level in emission are given. In cathodoluminescence (CL), the deep level emission intensity was enlarged with the electron beam penetration depth due to the higher defect density near the interface between ZnO and the sapphire. From the CL image of the ZnO film, the dislocation density was estimated as 6×108-3×109∕cm2. The lasing phenomenon was observed at the threshold power density of 1.3MW∕cm2 at 300K.

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Identifikatorlar

DOI: 10.1063/1.2150602

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