Temperature-dependent photoluminescence of quasialigned Al-doped ZnO nanorods
Haiping HeZhejiang University State Key Laboratory of Silicon Materials, , Hangzhou 310027, People’s. Republic of ChinaHaichao TangZhejiang University State Key Laboratory of Silicon Materials, , Hangzhou 310027, People’s. Republic of ChinaZ. Z. YeZhejiang University State Key Laboratory of Silicon Materials, , Hangzhou 310027, People’s. Republic of ChinaLi ZhuZhejiang University State Key Laboratory of Silicon Materials, , Hangzhou 310027, People’s. Republic of ChinaBinghui ZhaoZhejiang University State Key Laboratory of Silicon Materials, , Hangzhou 310027, People’s. Republic of ChinaL. WangZhejiang University State Key Laboratory of Silicon Materials, , Hangzhou 310027, People’s. Republic of ChinaX. H. LiZhejiang University State Key Laboratory of Silicon Materials, , Hangzhou 310027, People’s. Republic of China
2007en
ABI
Annotatsiya
Temperature-dependent photoluminescence (PL) properties of quasialigned Al-doped ZnO nanorods grown by thermal evaporation method were investigated. The ionization energy of the Al donor was determined to be ∼90meV. A PL peak at 3.315eV was observed at low temperature and was tentatively related to excitons bound to surface defects. The emission, along with its first longitudinal optical phonon replica, persists up to room temperature and dominates the near band edge (NBE) emission of the nanorods. The doping of Al results in a redshift of ∼0.04eV of the room-temperature NBE emission of the ZnO nanorods.
Hali tarjima qilinmagan
Identifikatorlar
Iqtiboslar va manbalar
4 ta iqtibos0 ta foydalanilgan manba