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Highly spin-polarized materials and devices for spintronics<sup>∗</sup>

Kōichirō InomataNational Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, JapanN. IkedaDepartment of Material Science, Graduate School of Engineering, Tohoku University, Aobayama, Sendai 980-8579, JapanNobuki TezukaDepartment of Material Science, Graduate School of Engineering, Tohoku University, Aobayama, Sendai 980-8579, JapanR. GotoDepartment of Material Science, Graduate School of Engineering, Tohoku University, Aobayama, Sendai 980-8579, JapanSatoshi SugimotoDepartment of Material Science, Graduate School of Engineering, Tohoku University, Aobayama, Sendai 980-8579, JapanM. WójcikInstitute of Physics, Polish Academy of Sciences, Warszawa 02-668, PolandE. JędrykaInstitute of Physics, Polish Academy of Sciences, Warszawa 02-668, Poland
2008en
ABI

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changes from parallel to antiparallel. The inverse TMR suggests the negative spin polarization of CFO, which is consistent with the band structure of CFO obtained by first principle calculation. The - 124% TMR corresponds to the spin filtering efficiency of 77% by the CFO barrier.

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