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Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

Viet Phuong PhamSKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University (SKKU) Suwon Gyeonggi‐do 440–746 Republic of KoreaGeun Young YeomSKKU Advanced Institute of Nano Technology (SAINT) School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon Gyeonggi‐do 440–746 Republic of Korea
2016en
ABI

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Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS 2 ) have recently attracted much attention due to their nonzero‐gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS 2 ‐based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS 2 thin layers, and the progress made so far for their doping‐based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped‐MoS 2 in industry, as a guide for 2D material community, are also provided.

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