Growth of diamond thin films by dc plasma chemical vapor deposition
Kazuhiro SuzukiKyoei Plastic Company, 3-17, Sakuragi, Chichibu-shi, Saitama 368, JapanAtsuhito SawabeAoyama Gakuin University, 6-16-1 Chitosedai, Setagaya-ku, Tokyo 157, JapanHiroaki YasudaAoyama Gakuin University, 6-16-1 Chitosedai, Setagaya-ku, Tokyo 157, JapanTadao InuzukaAoyama Gakuin University, 6-16-1 Chitosedai, Setagaya-ku, Tokyo 157, Japan
1987en
ABI
Annotatsiya
Diamond thin films have been formed by dc plasma chemical vapor deposition with a high growth rate (∼20 μm/h). The diamond has been grown from methane (CH4) and hydrogen (H2) mixed gases on Si and α-Al2O3 substrates at a pressure of 200 Torr without surface scratching by diamond or c-BN powder. The obtained films have good crystallinity in the sense of electron and x-ray diffraction. Vicker’s hardness of the film is the same as that of natural diamond (∼10 000 kg/mm2). The influence of the dc discharge in a low vacuum (∼200 Torr) on diamond synthesis will be discussed briefly.
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