Maqola

Silicon Carbide as a Platform for Power Electronics

C. R. EddyU.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USAD. Kurt GaskillU.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA

2009en

ABI

Annotatsiya

Methods for growing large, defect-free silicon carbide crystals have enabled the fabrication of devices that can operate at high power.

Hali tarjima qilinmagan

Identifikatorlar

DOI: 10.1126/science.1168704

Iqtiboslar va manbalar

2 ta iqtibos0 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar