Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide

1. The effect of electron beam on nanocrystallites size, strain and structural parameters of the silicon carbide nanopowder

   M. Yu. Tashmetov, B. A. Abdurakhimov, M.N. Mirzayev +1

   MaqolaAdvanced ceramic materials synthesisInternational Journal of Modern Physics B20195 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.199232

2. Radiation Hard Devices Based on SiC

   Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000250