Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy
Young-Woo HeoKyungpook National University Department of Inorganic Materials Engineering, , Daegu, 702-701, KoreaD. P. NortonUniversity of Florida Department of Materials Science Engineering, , P.O. Box 116400, Gainesville, Florida 32611S. J. PeartonUniversity of Florida Department of Materials Science Engineering, , P.O. Box 116400, Gainesville, Florida 32611
2005en
ABI
Annotatsiya
The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy VZn−) and the yellow to donor-deep acceptor (oxygen vacancy, Oi−).
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