Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions
А. YusupovTashkent Automobile and Road Institute, Tashkent, 100060, UzbekistanК. АдамбаевTashkent Automobile and Road Institute, Tashkent, 100060, UzbekistanZafar TuraevUlugbek National University of Uzbekistan, Tashkent, 100174, UzbekistanSukhrob AlievAndizhan State University, Andizhan, 710000, UzbekistanA. KutlimratovPhysicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan
ABI
Annotatsiya
Anisotype p-Cu2ZnSnS4/n-Si heterojunctions have been manufactured for the first type by sulfidation of base-metal layers predeposited onto polycrystalline silicon substrates. Current–voltage characteristics of the heterojunctions are analyzed, and the mechanisms of current transfer are discussed. It is established that forward-biased structures are characterized by both tunneling-recombination processes and space-charge limited mobility of carriers. In reversely biased heterojunctions, space-charge limited currents predominate.
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