Photosensitivity of n-CdS/p-CdTe heterojunctions obtained by chemical surface deposition of CdS
Г. А. ИльчукLvivska Polytechnika National University, Lviv, 79013, UkraineV. V. Kus’nézhLvivska Polytechnika National University, Lviv, 79013, UkraineV. Yu. Rud’St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, RussiaYu. V. RudIoffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaP. ShapowalLvivska Polytechnika National University, Lviv, 79013, UkraineR. PetrusLvivska Polytechnika National University
2010en
ABI
Annotatsiya
A new technology of chemical surface deposition is developed, and thin CdS films (35–100 nm) on the p-CdTe substrates are obtained. Electrical and photoelectric properties of n-CdS/p-CdTe heterojunctions are studied, and it is shown that the developed method provides high efficiency of photoconversion in the range restricted by the CdTe and CdS band gaps. It is shown that the method of chemical surface deposition of CdS can be used in the design of thin-film n-CdS/p-CdTe.
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