Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
Li SongDepartment of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005Lijie CiDepartment of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005Hao LüDepartment of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005Павел Б. СорокинDepartment of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005Chuanhong JinNanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, JapanJie NiDepartment of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005Alexander G. KvashninSiberian Federal University, 79 Svobodny av., Krasnoyarsk, 660041, RussiaDmitry G. KvashninSiberian Federal University, 79 Svobodny av., Krasnoyarsk, 660041, RussiaJun LouDepartment of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005Boris I. YakobsonDepartment of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005Pulickel M. AjayanDepartment of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005
2010en
ABI
Annotatsiya
Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called "white graphene", has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN films consisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoindentation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.
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