Formation of radiation defects in zinc-doped silicon solar cells
Sh. MakhkamovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanР. А. МуминовPhysical-Technical Institute, NPO Fizika-Solntse, Uzbek Academy of Sciences, Tashkent, UzbekistanM. KаrimovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanK. P. AbdurakhmanovTashkent University of Information Technologies, Tashkent, UzbekistanN.A. TursunovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanА. R. SattievInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanM. N. ErdonovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanKh. M. KholmedovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, Uzbekistan
ABI
Annotatsiya
The influence of y-radiation on the photoelectric characteristics of solar cells (SCs) made of zincdoped silicon has been studied. It has been proved that the degradation degree of SC photoelectric characteristics depended on the concentration of zinc in the silicon. An increase in the zinc concentration within p-Si〈Zn〉 enhances the resistance of the photoelectric characteristics of SCs to ionizing radiation.
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