The fabrication and investigation of n/CdS-p/CdTe-n/Si structures
I.B. Sapaev“Fizika-Solntse” Scientific Production Association, Applied Physics Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanШ. А. Мирсагатов“Fizika-Solntse” Scientific Production Association, Applied Physics Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanБ. Сапаев“Fizika-Solntse” Scientific Production Association, Applied Physics Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of Uzbekistan
ABI
Annotatsiya
Attempts to obtain heterojunctions between A2B6 (cadmium telluride and cadmium sulfide) compounds and silicon were made. The distributions of chemical components and some photoelectric properties of the surfaces of the produced layers were investigated.
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