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Reconfigurable Complementary Monolayer MoTe<sub>2</sub> Field-Effect Transistors for Integrated Circuits

Stefano LarentisMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United StatesBabak FallahazadMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United StatesHema C. P. MovvaMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United StatesKyounghwan KimMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United StatesAmritesh RaiMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United StatesTakashi TaniguchiNational Institute for Materials Science, 1-1-Namiki, Tsukuba, Ibaraki 305-0044, JapanKenji WatanabeNational Institute for Materials Science, 1-1-Namiki, Tsukuba, Ibaraki 305-0044, JapanSanjay K. BanerjeeMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United StatesEmanuel TutucMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States

2017en

ABI

Annotatsiya

Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demonstrate an air-stable, reconfigurable, complementary monolayer MoTe2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts. The introduction of a multigate design with prepatterned bottom contacts allows us to independently achieve low contact resistance and threshold voltage tuning, while also decoupling the Schottky contacts and channel gating. We illustrate a complementary inverter and a p-i-n diode as potential applications.

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Identifikatorlar

DOI: 10.1021/acsnano.7b01306

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