Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films
Sharifa B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics at the National University of UzbekistanS. A. MuzafarovaInstitute of Semiconductor Physics and Microelectronics at the National University of UzbekistanA. M. AbdugafurovInstitute of Semiconductor Physics and Microelectronics at the National University of UzbekistanKakhramon FayzullaevInstitute of Semiconductor Physics and Microelectronics at the National University of UzbekistanElmira NaurzalievaInstitute of Semiconductor Physics and Microelectronics at the National University of UzbekistanDilmurod A. RakhmanovInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan
ABI
Annotatsiya
Based on CdTe and CdZnTe detectors a number of promising devices were created, which found their application in metallurgy, in solving the problems of customs control and control of nuclear materials, as well as matrix detectors created for the manufacture of medical devices and devices for space research. Detectors, created on the basis of polycrystalline semiconductor CdTe and CdZnTe films with a columnar structure on a molybdenum substrate with a thickness d = 30150 μm, had a specific resistance p > 10^5 10^8 W-cm. The energy resolution of the CdTe and CdZnTe detectors at room temperature reached ~ 5 keV on the 59.6 keV 241Am line.
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