Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering
Rawiwan ChaleawpongDepartment of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, ThailandNathaporn PromrosDepartment of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, ThailandPeerasil CharoenyuenyaoDepartment of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, ThailandNattakorn BorwornpornmeteeDepartment of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, ThailandPattarapol SittisartDepartment of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, ThailandPhongsaphak SittimartDepartment of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, JapanYūki TanakaDepartment of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, JapanTsuyoshi YoshitakeDepartment of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
2020en
ABI
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