Effect of lattice deformation on semiconducting properties of CrSi2
А. В. КривошееваBelarussian State University of Informatics and Radioelectronics, Minsk, 220013, BelarusВ. Л. ШапошниковBelarussian State University of Informatics and Radioelectronics, Minsk, 220013, BelarusA. E. KrivosheevBelarussian State University of Informatics and Radioelectronics, Minsk, 220013, BelarusА. Б. ФилоновBelarussian State University of Informatics and Radioelectronics, Minsk, 220013, BelarusВ. Е. БорисенкоBelarussian State University of Informatics and Radioelectronics, Minsk, 220013, Belarus
2003en
ABI
Annotatsiya
The effect of isotropic and anisotropic deformation on electronic and optical properties of semiconducting chromium disilicide CrSi2 is studied by the method of augmented plane waves. The compound is found to be an indirect-gap semiconductor with a band gap width of about 0.3 eV. It is found that the deformation affects the transitions similarly; however, for anisotropic deformation this effect is strongly nonlinear, and the stretching of the lattice up to 106% along the axis a results in the occurrence of a direct transition.
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