Very heavily electron-doped CrSi₂as a high-performance high-temperature thermoelectric material

We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi2 and find that at temperatures of 900–1250 K and electron dopings of 1–4 × 1021 cm−3, thermopowers as large in magnitude as 200 μV K−1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping.

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