Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier
K. PoželaSemiconductor Physics Institute, Center for Physical Sciences and Technology, Vilnius, 01108, LithuaniaAldis ŠilėnasSemiconductor Physics Institute, Center for Physical Sciences and Technology, Vilnius, 01108, LithuaniaJ. PožėlaSemiconductor Physics Institute, Center for Physical Sciences and Technology, Vilnius, 01108, LithuaniaV. JucienėSemiconductor Physics Institute, Center for Physical Sciences and Technology, Vilnius, 01108, LithuaniaГ. Б. ГалиевInstitute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, RussiaJ. S. Vasil’evskiiMEPHI National Nuclear Research University, Moscow, 115409, RussiaE. A. KlimovInstitute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia
2012en
ABI
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