Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts
V. A. Kulbachinskiı̆M.V. Lomonosov Moscow State University, Moscow, GSP-1, 119991 RussiaN. A. YuzeevaInstitute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105 Moscow, RussiaГ. Б. ГалиевInstitute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105 Moscow, RussiaE. A. KlimovInstitute of Ultra-High-Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105 Moscow, RussiaИ. С. ВасильевскийMoscow Engineering Physics Institute (MEPhI)—National Nuclear Research University, 115409 Moscow, RussiaР. А. ХабибуллинMoscow Engineering Physics Institute (MEPhI)—National Nuclear Research University, 115409 Moscow, RussiaД. С. ПономаревMoscow Engineering Physics Institute (MEPhI)—National Nuclear Research University, 115409 Moscow, Russia
2012en
ABI
Annotatsiya
We have measured and calculated effective masses m* and the band structure of the In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well on the InP substrate with one or two InAs inserts in the quantum well and GaAs inserts in heterointerface barriers. The effective mass m* was measured by the Shubnikov?de Haas effect. Double symmetric InAs inserts in a quantum well lead to decreasing of m* by about 10%?35% as compared with the uniform In0.53Ga0.47As lattice-matched quantum well.
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