Hot carrier electromotive force caused by surface potential modulation in a strong microwave field
G. GulyamovEngineering-Pedagogical Institute, Namangan, 716003, UzbekistanMukhammadjon G. DadamirzaevEngineering-Pedagogical Institute, Namangan, 716003, UzbekistanS. R. BoĭdedaevEngineering-Pedagogical Institute, Namangan, 716003, Uzbekistan
ABI
Annotatsiya
The effect of a heating wave distortion on recombination currents and electromotive force generated at the p-n junction in a strong microwave field was studied. High-frequency perturbations of the surface potential and the p-n junction height by the heating wave under the conditions of short and open circuits were shown to decrease the effective barrier height and to cause an anomalously high electromotive force, respectively.
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