Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method
Shingo KishinoDepartment of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JapanTomohiro ImaiDepartment of Physics, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JapanTsutomu IidaDepartment of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JapanYoshiaki NakaishiDepartment of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JapanMasato ShinadaDepartment of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JapanYoshifumi TakanashiDepartment of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JapanNoriaki HamadaDepartment of Physics, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, Japan
2006en
ABI
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