Development of Technology for Obtaining Nanosized Heterostructured Films by Ion-Plasma Deposition
Muradulla NormuradovKarshi State UniversityШ. Т. ХожиевInstitute of Bioorganic Chemistry, Academy of Sciences of the Republic of UzbekistanK.T. DovranovKarshi State UniversityKh.T. DavranovKarshi State UniversityMuzaffar DavlatovKarshi State UniversityF.K. KhollokovInstitute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan
ABI
Annotatsiya
The study of films containing narrow-gap semiconductors is a very promising field related to the production of thermal sensors. In this work, we consider the possibility of obtaining the film coatings from silicides of Ba, Na, Ni, Co, Pd, Mn, and P and BaTiO3 using ionplasma methods. The production of film coatings from metal silicides and BaTiO3 on the surface of crystalline silicon and mica and their electronic and X-ray structural characteristics are studied. The dependence of the properties of film coatings on the conditions of the film deposition is determined.
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