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Low-resistance orthorhombic MoO3-x thin film derived by two-step annealing

Lei MengDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo 152-8552, JapanAkira YamadaDepartment of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo 152-8552, Japan

2018en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/j.tsf.2018.09.017

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