Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy
Б. СапаевPhysicotechnical Institute of Physics-the Sun Scientific Association, Academy of Sciences of Republic Uzbekistan, Tashkent, 700084, UzbekistanA. S. SaidovPhysicotechnical Institute of Physics-the Sun Scientific Association, Academy of Sciences of Republic Uzbekistan, Tashkent, 700084, Uzbekistan
ABI
Annotatsiya
The lattice parameters and band gap are experimentally determined for Si-Si1−x Gex structures in relation to the component ratiox (0 ≤ x ≤ 1). The distribution of components over the hickness of the Si1−x Gex alloys and certain photoelectric properties are studied. The experimental data indicate that the structures obtained are of high quality. Graded-gap Si1−x Gex alloys (0 ≤ x ≤ 1) can be used for the fabrication of photoelectric devices sensitive in the visible and near-IR regions. They can also be used as substrates for GaAs and GaAs-based layers.
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