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The Role of Back Buffer Layers and Absorber Properties for >25% Efficient CdTe Solar Cells

Geethika K. LiyanageWright Center for Photovoltaics Innovation and Commercialization, Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United StatesAdam B. PhillipsWright Center for Photovoltaics Innovation and Commercialization, Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United StatesFadhil K. AlfadhiliWright Center for Photovoltaics Innovation and Commercialization, Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United StatesRandy J. EllingsonWright Center for Photovoltaics Innovation and Commercialization, Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United StatesMichael J. HebenWright Center for Photovoltaics Innovation and Commercialization, Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, United States
2019en
ABI

Annotatsiya

As the performance of the front interface and the CdTe absorber are improved, minority carrier recombination at the back of the device will limit the photoconversion efficiency. To determine the limits of performance, we have completed simulations to understand the loss mechanisms, the band bending, and the energetics at the interface between the absorber and the back contact buffer layer. In particular, we have explored how the conduction and valence band offsets, the doping levels in the back buffer and CdTe layers, and the back surface recombination velocity affect the device performance. These results provide guidance for the development of back contacts that will help push CdTe device efficiencies to 25% and beyond.

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DOI
10.1021/acsaem.9b00367

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