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Effect of γ-irradiation on spectral properties of undoped Y2SiO5 crystals

Huiyong PangGraduate School of the Chinese Academy of Sciences, Beijing 100039, People's Republic of ChinaGuangjun ZhaoLiangbi SuShanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Qinghe Road, 390, P. O. Box 800-211, Shanghai 201800, People's Republic of ChinaMingyin JieGraduate School of the Chinese Academy of Sciences, Beijing 100039, People's Republic of ChinaXiaoming HeShanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Qinghe Road, 390, P. O. Box 800-211, Shanghai 201800, People's Republic of ChinaJun XuShanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Qinghe Road, 390, P. O. Box 800-211, Shanghai 201800, People's Republic of China

2006en

ABI

Annotatsiya

The absorption spectra of undoped Y2SiO5 crystals were studied before and after γ-irradiation. After γ-irradiation, the additional absorption peaks at 260-270 and 320nm were observed in as-grown and H2-annealed Y2SiO5 crystal, but it did not occur in air-annealed Y2SiO5 crystal. These absorption peaks were attributed to F color centers and O– hole centers, respectively. Owing to more oxygen vacancies and color centers in H2-annealed Y2SiO5 crystal than that in as-grown Y2SiO5 crystal after γ-irradiation, the additional absorption peaks were more intense in the former than that in the latter. With the irradiation dose increasing from 20 to 220kGy, the intensity of additional absorption peaks increased. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Identifikatorlar

DOI: 10.1002/crat.200510570

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