In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
Shuji TanakaDepartment of Electronics, Fukuoka Institute of Technology, 3-30-1 Wajiro-Higashi, Higashi-ku, Fukuoka 811-0295, JapanTetsuo IkariDepartment of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, JapanHajime KitagawaDepartment of Electronics, Fukuoka Institute of Technology, 3-30-1 Wajiro-Higashi, Higashi-ku, Fukuoka 811-0295, Japan
2001en
ABI
Annotatsiya
In-diffusion and annealing processes of substitutional nickel atoms in dislocation-free silicon are studied in the temperature range from 940 to 1020°C to distinguish between the site exchange mechanisms of nickel atoms. The concentration of substitutional nickel atoms varies with time according to the theoretical prediction of the dissociative mechanism. It is found that the in-diffusion and annealing rates are accelerated by nickel precipitation in the bulk. The relationship between the time constant of the two processes and the volume density of the precipitates is discussed.
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