Influence of defects and dopants on the sensitivity of arsenene towards HCN
Qingxiao ZhouHenan Key Laboratory of Photoelectric Energy Storage Materials and Applications, Henan University of Science and Technology, Luoyang 471023, People’s Republic of ChinaWeiwei JuCollege of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People’s Republic of ChinaYaxin LiuCollege of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People’s Republic of ChinaJiahui LiCollege of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People’s Republic of ChinaQian ZhangCollege of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People’s Republic of China
2019en
ABI
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