Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions
Xiaoming YuanHunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University 1 , 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of ChinaDong PanBeijing Academy of Quantum Information Sciences 3 , Beijing 100193, People's Republic of ChinaYijin ZhouHunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University 1 , 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of ChinaXutao ZhangMOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University 4 , Xi'an 710129, People's Republic of ChinaKun PengDepartment of Physics, University of Oxford, Clarendon Laboratory 5 , Parks Road, Oxford OX1 3PU, United KingdomBijun ZhaoDepartment of Electronic Materials Engineering, Research School of Physics, The Australian National University 6 , Canberra, Australian Capital Territory 2601, AustraliaMingtang DengInstitute for Quantum Information and State Key Laboratory of High Performance Computing, College of Computer Science and Technology, National University of Defense Technology 7 , Changsha 410073, People's Republic of ChinaJun HeHunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University 1 , 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of ChinaHark Hoe TanARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University 8 , Canberra, Australian Capital Territory 2601, AustraliaC. JagadishARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University 8 , Canberra, Australian Capital Territory 2601, Australia
2021en
ABI
Annotatsiya
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays in a fully controllable way and is thus of great interest in both basic science and device applications. Here, an overview of this promising technique is presented, focusing on the growth fundamentals, formation of III–V nanowire arrays, monolithic integration of III–V nanowire arrays on silicon, the growth of nanowire heterostructures, and networks of various shapes. The applications of these III–V nanostructure arrays in photonics, electronics, optoelectronics, and quantum science are also reviewed. Finally, the current challenges and opportunities provided by SAE are discussed.
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