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Ish: Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

1. Rapid 3D Defect Mapping in SiC Betavoltaics via Positron Annihilation Tomograph

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   ABIABI:AkademIndex/openalex/2025.article.001186